New very low resistance power mosfet

[Anonymous]

FROM EDN on-line: Rohm of Japan has developed a power MOSFET, based on silicon carbide
(SiC), that slashes loss to only 1/40th that of the prior Si-based design. The on-resistance is 7.15 mOhms, and the dielectric strength 1000V.
Rohm of Japan has developed a power MOSFET, based on silicon carbide (SiC), that slashes loss to only 1/40th that of the prior Si-based design. The on-resistance is 7.15 m

 

[Anonymous]

Do you know the output capacitance of this new MOSFET?
This could be beneficial for a very high power PI machine.
Thanks
bbsailor

 

[Anonymous]

Maybe, the new product isn't in the market yet.
Here some products. You can contact them for more info:
Main page:
http://www.rohmelectronics.com/sales/japan.htm
Transistors:
http://www.rohmelectronics.com/products/transistors.htm